2sb633p/2sd613p no.6662-1/4 features ? high breakdown voltage, v ceo 85v, high current 6a. ? af 35 to 45w output. specifications ( ) : 2sb633p absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo ( - )100 v collector-to-emitter voltage v ceo ( - )85 v emitter-to-base voltage v ebo ( - )6 v collector current i c ( - )6 a collector current (pulse) i cp ( - )10 a collector dissipation p c tc=25 c60w junction temperature tj 150 c storage temperature tstg - 55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0 (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 ma continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6662 package dimensions unit : mm 2010c [2sb633p / 2sd613p] 13001 ts im ta-3082 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : base 2 : collector 3 : emitter sanyo : to-220 10.2 5.1 3.6 18.0 5.6 2.7 6.3 15.1 1.2 14.0 0.8 1.3 4.5 0.4 2.55 2.55 2.7 123 pnp / npn epitaxial planar silicon transistors 2sb633p / 2sd613p 85v / 6a, af 35 to 45w output applications
2sb633p/2sd613p no.6662-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =(--)5v, i c =(--)1a 40* 320* h fe 2v ce =(--)5v, i c =(--)3a 20 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 15 mhz output capacitance cob v cb =(--)10v, f=1mhz (150)110 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)4a, i b =(--)0.4a (--)2.0 v base-to-emitter voltage v be v ce =(--)5v, i c =(--)1a (--)1.5 v collector-to-base breakdown voltage v (br)cbo i c =(--)5ma, i e =0 (--)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)5ma, r be = (--)85 v i c =(--)50ma, r be = (--)85 v emitter-to-base breakdown voltage v (br)ebo i e =(--)5ma, i c =0 (--)6 v turn-on time t on see specified test circuit. (0.16)0.28 m s fall time t f see specified test circuit. (0.33)0.50 m s storage time t stg see specified test circuit. (1.45)3.60 m s * : the 2sb633p / 2sd613p are classified by 1a h fe as follows : rank de f h fe 60 to 120 100 to 200 160 to 320 swicthing time test circuit 0 0 --10 --20 --30 --40 --50 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a it02142 -- 5 -- 2 -- 4 -- 3 -- 1 i b =0 --60ma --10ma --20ma --40ma --100ma --80ma 2sb633p 0 0 1020304050 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a it02143 5 2 4 3 1 i b =0 60ma 100ma 80ma 40ma 20ma 10ma 2sd613p 200v r 1 v cc =20v v be = --2v 51 w input output 20 w 1 m f1 m f pw=20 m s i b1 i b2 10i b1 = --10i b2 =i c =1a for pnp, the polarity is reversed.
2sb633p/2sd613p no.6662-3/4 p c -- tc collector dissipation, p c -- w case tamperature, tc -- c 70 60 50 40 10 20 30 0 40 20 60 80 100 120 140 160 0 it02151 v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v it02148 1.0 0.1 5 5 7 7 3 3 2 5 3 2 0.1 23 57 23 57 1.0 10 i c / i b =10 2sd613p 2sb633p 2sb633p / 2sd613p v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v it02149 1.0 5 5 7 3 3 2 0.1 23 57 7 23 5 1.0 10 0.1 1.0 2 2 5 7 3 2 5 7 3 10 10 100 55 3 77 22 collector current, i c -- a collector-to-emitter voltage, v ce -- v i cp =10a i c =6a 100ms 10ms it02150 a s o dc operation 2sb633p / 2sd613p i c / i b =10 2sd613p 2sb633p (for pnp minus sign is omitted) (for pnp minus sign is omitted) (for pnp minus sign is omitted) (for pnp minus sign is omitted) f=1mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it02147 100 1000 5 7 5 7 3 3 2 1.0 23 57 23 57 100 10 h fe -- i c dc current gain, h fe 10 100 3 5 7 2 3 2 35 27 35 27 1.0 10 0.1 collector current, i c -- a it02146 v ce =5v 2sd613p 2sb633p 2sd613p 2sb633p (for pnp minus sign is omitted) (for pnp minus sign is omitted) 0 0.4 0.6 0.8 1.0 1.2 1.4 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a it02144 5 4 3 2 1 2sb633p / 2sd613p v ce =5v 10 100 3 5 5 7 7 3 2 33 55 77 22 1.0 10 0.1 f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz it02145 v ce =5v 2sd613p 2sb633p (for pnp minus sign is omitted) (for pnp minus sign is omitted)
2sb633p/2sd613p no.6662-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2001. specifications and information herein are subject to change without notice. ps
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